ONSEMI 2N5210BU
ONSEMI 2N5210BU

ONSEMI 2N5210BU

Manufacturer No:

2N5210BU

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA)

Description:

NPN -55°C~150°C TJ 50nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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2N5210BU information

ONSEMI 2N5210BU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2N5210BU.

  • Type
  • Parameter
  • Lifecycle Status
  • LAST SHIPMENTS (Last Updated: 6 days ago)
  • Factory Lead Time
  • 6 Weeks
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
  • 3
  • Weight
  • 179mg
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Bulk
  • Published
  • 2002
  • JESD-609 Code
  • e3
  • Pbfree Code
  • yes
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Tin (Sn)
  • Subcategory
  • Other Transistors
  • Voltage - Rated DC
  • 50V
  • Max Power Dissipation
  • 625mW
  • Terminal Position
  • BOTTOM
  • Current Rating
  • 100mA
  • Frequency
  • 30MHz
  • Number of Elements
  • 1
  • Element Configuration
  • Single
  • Power Dissipation
  • 625mW
  • Transistor Application
  • AMPLIFIER
  • Gain Bandwidth Product
  • 30MHz
  • Polarity/Channel Type
  • NPN
  • Transistor Type
  • NPN
  • Collector Emitter Voltage (VCEO)
  • 50V
  • Max Collector Current
  • 100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 200 @ 100?A 5V
  • Current - Collector Cutoff (Max)
  • 50nA
  • Vce Saturation (Max) @ Ib, Ic
  • 700mV @ 1mA, 10mA
  • Collector Emitter Breakdown Voltage
  • 50V
  • Transition Frequency
  • 30MHz
  • Collector Emitter Saturation Voltage
  • 700mV
  • Collector Base Voltage (VCBO)
  • 50V
  • Emitter Base Voltage (VEBO)
  • 4.5V
  • hFE Min
  • 200
  • Height
  • 5.33mm
  • Length
  • 5.2mm
  • Width
  • 4.19mm
  • REACH SVHC
  • No SVHC
  • Radiation Hardening
  • No

Download datasheets and manufacturer documentation for ONSEMI 2N5210BU.

Datasheets:

PCN Design/Specification:

PCN Packaging:

2N5210BU Overview


In this device, the DC current gain is 200 @ 100?A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 1mA, 10mA.Keeping the emitter base voltage at 4.5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).30MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.

2N5210BU Features


the DC current gain for this device is 200 @ 100?A 5V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 100mA
a transition frequency of 30MHz


2N5210BU Applications


There are a lot of ON Semiconductor
2N5210BU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

PURCHASE

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

Step6：Packaging Box

Step6：Packaging Box

SHIPPING COST

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

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