ONSEMI 2N4126TA
Manufacturer No:
2N4126TA
Manufacturer:
ONSEMI
Package:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Description:
PNP -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
Quantity:
In Stock :4727
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Expected Shipping：Mon, Jun 15 - Tue, Jun 16, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2N4126TA Information
ONSEMI 2N4126TA technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2N4126TA.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package
- TO-92-3
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Box (TB)
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Base Part Number
- 2N4126
- Power - Max
- 625mW
- Transistor Type
- PNP
- Type
- Parameter
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 2mA 1V
- Current - Collector Cutoff (Max)
- 50nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 400mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)
- 25V
- Current - Collector (Ic) (Max)
- 200mA
- Frequency - Transition
- 250MHz
Download datasheets and manufacturer documentation for ONSEMI 2N4126TA.
Datasheets:
2N4126TA Overview
In this device, the DC current gain is 120 @ 2mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.Product comes in the supplier's device package TO-92-3.There is a 25V maximal voltage in the device due to collector-emitter breakdown.
2N4126TA Features
the DC current gain for this device is 120 @ 2mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the supplier device package of TO-92-3
2N4126TA Applications
There are a lot of ON Semiconductor
2N4126TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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