ONSEMI 2N4125TA

Manufacturer No:

2N4125TA

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Description:

PNP -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

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In Stock :Available

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2N4125TA information

ONSEMI 2N4125TA technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2N4125TA.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package
TO-92-3

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Box (TB)

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Base Part Number
2N4125

Power - Max
625mW

Transistor Type
PNP

DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 2mA 1V

Current - Collector Cutoff (Max)
50nA ICBO

Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max)
30V

Current - Collector (Ic) (Max)
200mA

Download datasheets and manufacturer documentation for ONSEMI 2N4125TA.

Datasheets:

onsemiconductor-2n4125bu-datasheets-1115.pdf

2N4125TA Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 2mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

2N4125TA Features

the DC current gain for this device is 50 @ 2mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the supplier device package of TO-92-3

2N4125TA Applications

There are a lot of ON Semiconductor
2N4125TA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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