General Semiconductor 2N4115

Manufacturer No:

2N4115

Manufacturer:

General Semiconductor

Package:

TO-210AA, TO-59-3, Stud

Description:

- - 10?A (ICBO) TO-210AA, TO-59-3, Stud Stud Mount

Quantity:

Delivery:

Payment:

In Stock :Available

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2N4115 information

General Semiconductor 2N4115 technical specifications, attributes, parameters and parts with similar specifications to General Semiconductor 2N4115.

Type
Parameter

Mounting Type
Stud Mount

Package / Case
TO-210AA, TO-59-3, Stud

Supplier Device Package
TO-59

Mfr
General Semiconductor

Package
Bulk

Product Status
Active

Power - Max
37 W

DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 2A, 5V

Current - Collector Cutoff (Max)
10?A (ICBO)

Vce Saturation (Max) @ Ib, Ic
1.5V @ 500mA, 5A

Voltage - Collector Emitter Breakdown (Max)
80 V

Current - Collector (Ic) (Max)
5 A

Frequency - Transition
50MHz

Download datasheets and manufacturer documentation for General Semiconductor 2N4115.

2N4115 Overview

In this device, the DC current gain is 40 @ 2A, 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 500mA, 5A.Product comes in the supplier's device package TO-59.There is a 80 V maximal voltage in the device due to collector-emitter breakdown.

2N4115 Features

the DC current gain for this device is 40 @ 2A, 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the supplier device package of TO-59

2N4115 Applications

There are a lot of General Semiconductor
2N4115 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

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