Microchip 2N3700UB

Manufacturer No:

2N3700UB

Manufacturer:

Microchip

Package:

3-SMD, No Lead

Description:

NPN Silicon Low-Power 80V, 1A This specification covers the performance requirements for NPN, silicon, low-power 2N3019, 2N3057A and 2N3700 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/391. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eleven radiation levels are provided for quality levels JANTXV

Quantity:

In Stock :9342

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Shipped from：HK Warehouse

Expected Shipping：Sat, May 30 - Sun, May 31, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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PURCHASE

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

2N3700UB Information

Microchip 2N3700UB technical specifications, attributes, parameters and parts with similar specifications to Microchip 2N3700UB.

Type
Parameter

Category
Discrete Semiconductor Products

Manufacturer
Microchip Technology

Packaging
Bulk

Part Status
Active

Manufacturer Lead Time
30 Weeks

Current - Collector (Ic) (Max)
1 A

Current - Collector Cutoff (Max)
10nA

DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA, 10V

Frequency - Transition
-

Mounting Type
Surface Mount

Type
Parameter

Operating Temperature
-65°C ~ 200°C (TJ)

Package / Case
3-SMD, No Lead

Power - Max
500 mW

Supplier Device Package
UB

Transistor Type
NPN

Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max)
80 V

ExportControlClassNumber
EAR99

HtsusCode
8541.21.0095

MoistureSensitivityLevel
1 (Unlimited)

Download datasheets and manufacturer documentation for Microchip 2N3700UB.

Data Sheets:

8c6b5bed6bea189f3a03b75a703a9a07.pdf

This specification covers the performance requirements for NPN, silicon, low-power 2N3019, 2N3057A and 2N3700 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/391. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eleven radiation levels are provided for quality levels JANTXV, JANS, JANHC, and JANKC. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device packages for the encapsulated device types are as follows: TO-205AA and TO-205AD (formerly TO-5 and TO-39), TO-206AB (formerlyTO-46), three terminal round metal can TO-206AA (formerly TO-18), and four terminal SMD package UB and UBC.