General Semiconductor 2N2824

Manufacturer No:

2N2824

Manufacturer:

General Semiconductor

Package:

TO-211MB, TO-63-4, Stud

Description:

- - - TO-211MB, TO-63-4, Stud Stud Mount

Quantity:

Delivery:

Payment:

In Stock :Available

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2N2824 information

General Semiconductor 2N2824 technical specifications, attributes, parameters and parts with similar specifications to General Semiconductor 2N2824.

Type
Parameter

Mounting Type
Stud Mount

Package / Case
TO-211MB, TO-63-4, Stud

Supplier Device Package
TO-63

Mfr
General Semiconductor

Package
Bulk

Product Status
Active

Power - Max
118 W

DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 20A, 3V

Vce Saturation (Max) @ Ib, Ic
600mV @ 1A, 10A

Voltage - Collector Emitter Breakdown (Max)
100 V

Current - Collector (Ic) (Max)
30 A

Frequency - Transition
20MHz

Download datasheets and manufacturer documentation for General Semiconductor 2N2824.

2N2824 Overview

DC current gain in this device equals 10 @ 20A, 3V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 1A, 10A.Product comes in TO-63 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2N2824 Features

the DC current gain for this device is 10 @ 20A, 3V
the vce saturation(Max) is 600mV @ 1A, 10A
the supplier device package of TO-63

2N2824 Applications

There are a lot of General Semiconductor
2N2824 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

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