General Semiconductor 2N2632
Manufacturer No:
2N2632
Manufacturer:
General Semiconductor
Package:
TO-210AA, TO-59-3, Stud
Description:
- - 100nA (ICBO) TO-210AA, TO-59-3, Stud Stud Mount
Quantity:
In Stock :4956
Looking for price or availability? Send us an RFQ and our sales team will respond quickly.
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Expected Shipping：Wed, Jul 1 - Thu, Jul 2, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
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3. It may cost additional remote fees for delivery if you are in a remote area.
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
2N2632 Information
General Semiconductor 2N2632 technical specifications, attributes, parameters and parts with similar specifications to General Semiconductor 2N2632.
- Type
- Parameter
- Mounting Type
- Stud Mount
- Package / Case
- TO-210AA, TO-59-3, Stud
- Supplier Device Package
- TO-59
- Mfr
- General Semiconductor
- Package
- Bulk
- Product Status
- Active
- Power - Max
- 20 W
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 40 @ 1A, 2V
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 100mA, 1A
- Type
- Parameter
- Voltage - Collector Emitter Breakdown (Max)
- 60 V
- Current - Collector (Ic) (Max)
- 5 A
- Frequency - Transition
- 20MHz
Download datasheets and manufacturer documentation for General Semiconductor 2N2632.
2N2632 Overview
In this device, the DC current gain is 40 @ 1A, 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 100mA, 1A.Supplier device package TO-59 comes with the product.The device exhibits a collector-emitter breakdown at 60 V.
2N2632 Features
the DC current gain for this device is 40 @ 1A, 2V
the vce saturation(Max) is 250mV @ 100mA, 1A
the supplier device package of TO-59
2N2632 Applications
There are a lot of General Semiconductor
2N2632 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
2N2632 FAQ
Can I request a quote for 2N2632?
2N2632 from General Semiconductor is ready for RFQ submission. Send your target quantity and requirements, and AIChipLink will check current availability, lead time, and quantity-based pricing.
Why is pricing not shown as a fixed value for 2N2632?
The final price for 2N2632 depends on requested quantity, supply conditions, date code, package option, and destination. An RFQ lets us return the current market quote for your order.
Which specifications should I review for 2N2632?
2N2632 is a General Semiconductor electronic component part. Key details include Voltage - Collector Emitter Breakdown (Max): 60 V and DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V; contact us if you need the specifications verified before sourcing.
When will I receive a quotation for 2N2632?
After you submit the RFQ for 2N2632, our sales team typically replies within 24 hours with availability, unit pricing, lead time, shipping choices, and possible substitutes.
What is the expected shipping time for 2N2632?
Once stock for 2N2632 is confirmed, available inventory can generally ship within 1–2 business days. The final schedule depends on quantity, warehouse source, and delivery address.
Can AIChipLink help find alternatives to 2N2632?
Yes. If 2N2632 is unavailable, end-of-life, or outside your schedule, we can review comparable General Semiconductor electronic component parts and compatible replacement options.
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