Microchip 2N2432AUB

Manufacturer No:

2N2432AUB

Manufacturer:

Microchip

Package:

4-SMD, No Lead

Description:

NPN -65°C~200°C TJ 10nA 4-SMD, No Lead Surface Mount

Quantity:

In Stock :6097

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Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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2N2432AUB Information

Microchip 2N2432AUB technical specifications, attributes, parameters and parts with similar specifications to Microchip 2N2432AUB.

Type
Parameter

Factory Lead Time
12 Weeks

Mounting Type
Surface Mount

Package / Case
4-SMD, No Lead

Number of Pins
3

Supplier Device Package
UB

Operating Temperature
-65°C~200°C TJ

Published
2007

Part Status
Active

Power - Max
360mW

Transistor Type
NPN

Type
Parameter

DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1mA 5V

Current - Collector Cutoff (Max)
10nA

Vce Saturation (Max) @ Ib, Ic
150mV @ 500?A, 10mA

Voltage - Collector Emitter Breakdown (Max)
45V

Current - Collector (Ic) (Max)
100mA

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for Microchip 2N2432AUB.

2N2432AUB Overview

In this device, the DC current gain is 80 @ 1mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 150mV @ 500?A, 10mA.Product comes in the supplier's device package UB.There is a 45V maximal voltage in the device due to collector-emitter breakdown.