General Semiconductor 2N1650
Manufacturer No:
2N1650
Manufacturer:
General Semiconductor
Package:
TO-111-4, Stud
Description:
- - 100?A (ICBO) TO-111-4, Stud Stud Mount
Quantity:
In Stock :8274
Looking for price or availability? Send us an RFQ and our sales team will respond quickly.
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Shipped from：HK Warehouse
Expected Shipping：Thu, Jul 2 - Fri, Jul 3, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
2N1650 Information
General Semiconductor 2N1650 technical specifications, attributes, parameters and parts with similar specifications to General Semiconductor 2N1650.
- Type
- Parameter
- Mounting Type
- Stud Mount
- Package / Case
- TO-111-4, Stud
- Supplier Device Package
- TO-111
- Mfr
- General Semiconductor
- Package
- Bulk
- Product Status
- Active
- Power - Max
- 20 W
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 30 @ 500mA, 10V
- Current - Collector Cutoff (Max)
- 100?A (ICBO)
- Vce Saturation (Max) @ Ib, Ic
- 1.2V @ 100mA, 1A
- Type
- Parameter
- Voltage - Collector Emitter Breakdown (Max)
- 80 V
- Current - Collector (Ic) (Max)
- 3 A
- Frequency - Transition
- 2MHz
Download datasheets and manufacturer documentation for General Semiconductor 2N1650.
2N1650 Overview
The DC current gain is the ratio of the base current to the collector current ?dc = Ic/Ib and the DC current gain for this device is 30 @ 500mA, 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 100mA, 1A.The product comes in the supplier device package of TO-111.A 80 V maximal voltage - Collector Emitter Breakdown is present in the device.
2N1650 Features
the DC current gain for this device is 30 @ 500mA, 10V
the vce saturation(Max) is 1.2V @ 100mA, 1A
the supplier device package of TO-111
2N1650 Applications
There are a lot of General Semiconductor
2N1650 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
2N1650 FAQ
Can I request a quote for 2N1650?
2N1650 from General Semiconductor is ready for RFQ submission. Send your target quantity and requirements, and AIChipLink will check current availability, lead time, and quantity-based pricing.
Why is pricing not shown as a fixed value for 2N1650?
The final price for 2N1650 depends on requested quantity, supply conditions, date code, package option, and destination. An RFQ lets us return the current market quote for your order.
Which specifications should I review for 2N1650?
2N1650 is a General Semiconductor electronic component part. Key details include Voltage - Collector Emitter Breakdown (Max): 80 V and DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 10V; contact us if you need the specifications verified before sourcing.
When will I receive a quotation for 2N1650?
After you submit the RFQ for 2N1650, our sales team typically replies within 24 hours with availability, unit pricing, lead time, shipping choices, and possible substitutes.
What is the expected shipping time for 2N1650?
Once stock for 2N1650 is confirmed, available inventory can generally ship within 1–2 business days. The final schedule depends on quantity, warehouse source, and delivery address.
Can AIChipLink help find alternatives to 2N1650?
Yes. If 2N1650 is unavailable, end-of-life, or outside your schedule, we can review comparable General Semiconductor electronic component parts and compatible replacement options.
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