DIODES 2DD1664R-13
DIODES 2DD1664R-13

DIODES 2DD1664R-13

Manufacturer No:

2DD1664R-13

Manufacturer:

DIODES

Package:

GREEN, PLASTIC, SOT89-3L, 4 PIN

Description:

Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC, SOT89-3L, 4 PIN

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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2DD1664R-13 information

DIODES 2DD1664R-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES 2DD1664R-13.

  • Type
  • Parameter
  • Pbfree Code
  • Yes
  • RoHS Status
  • RoHS Compliant
  • Part Life Cycle Code
  • Active
  • Ihs Manufacturer
  • DIODES INC
  • Part Package Code
  • SOT-89
  • Package Description
  • GREEN, PLASTIC, SOT89-3L, 4 PIN
  • Pin Count
  • 4
  • Reach Compliance Code
  • compliant
  • ECCN Code
  • EAR99
  • Factory Lead Time
  • 8 Weeks
  • Samacsys Manufacturer
  • Diodes Incorporated
  • Case Connection
  • COLLECTOR
  • Collector Current-Max (IC)
  • 1 A
  • Collector-Emitter Voltage-Max
  • 32 V
  • Configuration
  • SINGLE
  • DC Current Gain-Min (hFE)
  • 180
  • JESD-30 Code
  • R-PSSO-F3
  • JESD-609 Code
  • e3
  • Moisture Sensitivity Level
  • 1
  • Number of Elements
  • 1
  • Number of Terminals
  • 3
  • Operating Temperature-Max
  • 150 °C
  • Package Body Material
  • PLASTIC/EPOXY
  • Package Shape
  • RECTANGULAR
  • Peak Reflow Temperature (Cel)
  • 260
  • Polarity/Channel Type
  • NPN
  • Power Dissipation-Max (Abs)
  • 1 W
  • Qualification Status
  • Not Qualified
  • Surface Mount
  • YES
  • Terminal Finish
  • MATTE TIN
  • Terminal Form
  • FLAT
  • Terminal Position
  • SINGLE
  • Time@Peak Reflow Temperature-Max (s)
  • 30
  • Transistor Application
  • SWITCHING
  • Transistor Element Material
  • SILICON
  • Transition Frequency-Nom (fT)
  • 280 MHz

Download datasheets and manufacturer documentation for DIODES 2DD1664R-13.

2DD1664R-13 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 100mA 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 280MHz.Single BJT transistor can take a breakdown input voltage of 32V volts.During maximum operation, collector current can be as low as 1A volts.

2DD1664R-13 Features


the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 280MHz


2DD1664R-13 Applications


There are a lot of Diodes Incorporated
2DD1664R-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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