

Renesas R1LP0108ESN-5SI#B0
Manufacturer No:
R1LP0108ESN-5SI#B0
Manufacturer:
Package:
32-SOIC (0.450, 11.40mm Width)
Description:
5V V 32 Pin Memory IC 20.75mm mm
Quantity:
Delivery:




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In Stock :Available
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R1LP0108ESN-5SI#B0 information
Renesas R1LP0108ESN-5SI#B0 technical specifications, attributes, parameters and parts with similar specifications to Renesas R1LP0108ESN-5SI#B0.
Type | Parameter |
---|---|
Factory Lead Time | 20 Weeks |
Mounting Type | Surface Mount |
Package / Case | 32-SOIC (0.450, 11.40mm Width) |
Surface Mount | YES |
Operating Temperature | -40°C~85°C TA |
Packaging | Tube |
Published | 2013 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 32 |
Terminal Finish | Tin (Sn) |
Technology | CMOS |
Voltage - Supply | 4.5V~5.5V |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Number of Functions | 1 |
Supply Voltage | 5V |
Terminal Pitch | 1.27mm |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 32 |
JESD-30 Code | R-PDSO-G32 |
Qualification Status | Not Qualified |
Type | Parameter |
---|---|
Power Supplies | 5V |
Supply Voltage-Min (Vsup) | 4.5V |
Memory Size | 1Mb 128K x 8 |
Memory Type | Volatile |
Operating Mode | ASYNCHRONOUS |
Supply Current-Max | 0.035mA |
Memory Format | SRAM |
Memory Interface | Parallel |
Organization | 128KX8 |
Output Characteristics | 3-STATE |
Memory Width | 8 |
Write Cycle Time - Word, Page | 55ns |
Standby Current-Max | 0.000002A |
Memory Density | 1048576 bit |
Access Time (Max) | 55 ns |
I/O Type | COMMON |
Standby Voltage-Min | 2V |
Length | 20.75mm |
Height Seated (Max) | 3.05mm |
Width | 11.4mm |
RoHS Status | ROHS3 Compliant |
User Guide
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