
Microchip 1N5820USE3/TR
Manufacturer No:
1N5820USE3/TR
Manufacturer:
Package:
Description:
Diode 20V, 3A Surface Mount B, SQ-MELF MIL-PRF-19500/620 High Reliability Hi-Rel Discrete Diode And Rectifier
Quantity:


In Stock :8286
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1N5820USE3/TR Information
Microchip 1N5820USE3/TR technical specifications, attributes, parameters and parts with similar specifications to Microchip 1N5820USE3/TR.
- Type
- Parameter
- CNHTS
- 8541100000
- USHTS
- 8541100040
- TARIC
- 8541100000
- CAHTS
- 8541100090
- BRHTS
- 85411011
- INHTS
- 85411000
- MXHTS
- 8541.10.01
- Type
- Parameter
Download datasheets and manufacturer documentation for Microchip 1N5820USE3/TR.
Data Sheets:
This 3A Schottky barrier diode family is metallurgically bonded and offers military grade qualifications for high-reliability applications on “1N” prefixed numbers (1N5822 and 1N6864), as well as "CDLL" and "DSB" prefixed numbers for packaged COTs components, "CD" prefixed COTs die , "CDS" prefixed for JANS grade components and "MNS" prefixed for Microchip New Space. This small diode is hermetically sealed with four levels of product assurance JAN, JANTX, JANTXV, JANS, for the military grade encapsulated devices, as specified in MIL-PRF-19500/620 and two levels of product assurance provided for each unencapsulated device type, JANHC, AND JANKC. The device package outlines for the encapsulated devices are as follows: Axial leaded B package and B MELF square end-cap surface mount version (US suffix). The average rectifier output current (Io) for this family is 3 Amps, with working peak reverse voltages (Vrwm) of 20V to 80V, maximum forward voltages (Vf) of 0.5V to 0.7V and maximum reverse leakage currents (Ir) of 0.10 mA to 0.15mA at 25 Celsius
1N5820USE3/TR Relevant information
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