ONSEMI SFT1202-E
Manufacturer No:
SFT1202-E
Manufacturer:
ONSEMI
Package:
TO-251-3 Short Leads, IPak, TO-251AA
Description:
NPN 150°C TJ 1?A ICBO 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
Quantity:
In Stock :7323
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
SFT1202-E Information
ONSEMI SFT1202-E technical specifications, attributes, parameters and parts with similar specifications to ONSEMI SFT1202-E.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time
- 2 Weeks
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Surface Mount
- NO
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Published
- 2012
- Type
- Parameter
- JESD-609 Code
- e6
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Bismuth (Sn/Bi)
- Subcategory
- Other Transistors
- Max Power Dissipation
- 1W
- Terminal Position
- SINGLE
Download datasheets and manufacturer documentation for ONSEMI SFT1202-E.
Datasheets:
SFT1202-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 165mV @ 100mA, 1A.The emitter base voltage can be kept at 7V for high efficiency.The part has a transition frequency of 140MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
SFT1202-E Features
the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 165mV @ 100mA, 1A
the emitter base voltage is kept at 7V
a transition frequency of 140MHz
SFT1202-E Applications
There are a lot of ON Semiconductor
SFT1202-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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