NXP PH4030AL115

Manufacturer No:

PH4030AL115

Manufacturer:

NXP

Package:

SC-100, SOT-669

Description:

MOSFET (Metal Oxide) N-Channel 4mOhm @ 15A, 10V 2090 pF @ 12 V 36.6 nC @ 10 V 30 V SC-100, SOT-669

Quantity:

In Stock :5336

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Shipped from：HK Warehouse

Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

PH4030AL115 Information

NXP PH4030AL115 technical specifications, attributes, parameters and parts with similar specifications to NXP PH4030AL115.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
SC-100, SOT-669

Supplier Device Package
LFPAK56, Power-SO8

Mfr
NXP USA Inc.

Package
Bulk

Product Status
Active

Series
TrenchMOS?

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
4mOhm @ 15A, 10V

Type
Parameter

Vgs(th) (Max) @ Id
2.15V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
2090 pF @ 12 V

Current - Continuous Drain (Id) @ 25°C
100A (Tc)

Gate Charge (Qg) (Max) @ Vgs
36.6 nC @ 10 V

Drain to Source Voltage (Vdss)
30 V

Download datasheets and manufacturer documentation for NXP PH4030AL115.

PH4030AL115 Overview

A device's maximum input capacitance is 2090 pF @ 12 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 30 V drain to source voltage (Vdss).