ONSEMI NTR1P02T3G
Manufacturer No:
NTR1P02T3G
Manufacturer:
ONSEMI
Package:
TO-236-3, SC-59, SOT-23-3
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 180m ? @ 1.5A, 10V ±20V 165pF @ 5V 2.5nC @ 5V TO-236-3, SC-59, SOT-23-3
Quantity:
In Stock :2112
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Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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NTR1P02T3G Information
ONSEMI NTR1P02T3G technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NTR1P02T3G.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Surface Mount
- YES
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2005
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Type
- Parameter
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -20V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
Download datasheets and manufacturer documentation for ONSEMI NTR1P02T3G.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
NTR1P02T3G Overview
A device's maximum input capacitance is 165pF @ 5V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.Its drain current is 1A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NTR1P02T3G Features
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 9 ns
NTR1P02T3G Applications
There are a lot of ON Semiconductor
NTR1P02T3G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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12.28 M
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