ONSEMI NTMKB4895NT1G
Manufacturer No:
NTMKB4895NT1G
Manufacturer:
ONSEMI
Package:
4-ICEPAK
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6m ? @ 15A, 10V ±20V 1644pF @ 15V 25nC @ 10V 30V 4-ICEPAK
Quantity:
In Stock :7125
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Step2：Desiccant Protection
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Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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NTMKB4895NT1G Information
ONSEMI NTMKB4895NT1G technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NTMKB4895NT1G.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 4-ICEPAK
- Number of Pins
- 4
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2011
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- BOTTOM
- Terminal Form
- NO LEAD
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 2
- JESD-30 Code
- R-XBCC-N2
- Qualification Status
- Not Qualified
Download datasheets and manufacturer documentation for ONSEMI NTMKB4895NT1G.
PCN Obsolescence/ EOL:
ReachStatement:
NTMKB4895NT1G Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1644pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 66A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 15A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 120A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
NTMKB4895NT1G Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 66A
based on its rated peak drain current 120A.
a 30V drain to source voltage (Vdss)
NTMKB4895NT1G Applications
There are a lot of ON Semiconductor
NTMKB4895NT1G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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