ONSEMI NTH4L045N065SC1
Manufacturer No:
NTH4L045N065SC1
Manufacturer:
ONSEMI
Package:
Description:
Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TO-247-4L
Quantity:
In Stock :9632
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Certified in-house inspection and testing facilities ensure all components meet internationally recognized quality standards.
User Guide
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NTH4L045N065SC1 Information
ONSEMI NTH4L045N065SC1 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NTH4L045N065SC1.
- Type
- Parameter
- Qg Total (nC)
- 105
- Output Capacitance (pF)
- 162
- Package Type
- TO-247-4
- Case Outline
- 340CJ
- MSL Type
- NA
- MSL Temp (°C)
- 0
- Container Qty.
- 450
- Family
- M2
- Tj Max (°C)
- 175
- Container Type
- TUBE
- Type
- Parameter
- Blocking Voltage BVDSS (V)
- 650
- ID(max) (A)
- 55
- RDS(on) Typ @ 25°C (mΩ)
- 33
Download datasheets and manufacturer documentation for ONSEMI NTH4L045N065SC1.
Datasheet:
Package Drawing:
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Application
- DC-DC Converter
- Boost Inverter
End Product
- UPS
- Solar
- Power Supply
Feature
- Max Junction Temperature 175°C
- 100% UIL Tested
- RoHS Compliant
- High Speed Switching and Low Capacitance
- 650V rated
- Max RDS(on) = 52.8 mΩ at Vgs = 18V, Id = 20A
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
