ONSEMI NTD95N02R
Manufacturer No:
NTD95N02R
Manufacturer:
ONSEMI
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tube 5m ? @ 20A, 10V ±20V 2400pF @ 20V 21nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :8210
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Shipped from：HK Warehouse
Expected Shipping：Wed, Jun 10 - Thu, Jun 11, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NTD95N02R Information
ONSEMI NTD95N02R technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NTD95N02R.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Published
- 2006
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- Voltage - Rated DC
- 24V
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 240
- Reach Compliance Code
- not_compliant
- Current Rating
- 95A
- Time@Peak Reflow Temperature-Max (s)
- 30
Download datasheets and manufacturer documentation for ONSEMI NTD95N02R.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
NTD95N02R Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 84 mJ.The maximum input capacitance of this device is 2400pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 32A.When VGS=24V, and ID flows to VDS at 24VVDS, the drain-source breakdown voltage is 24V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 26 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
NTD95N02R Features
the avalanche energy rating (Eas) is 84 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 26 ns
NTD95N02R Applications
There are a lot of ON Semiconductor
NTD95N02R applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)