ONSEMI NTB30N06L
Manufacturer No:
NTB30N06L
Manufacturer:
ONSEMI
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tube 46m ? @ 15A, 5V ±15V 1150pF @ 25V 32nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :4741
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NTB30N06L Information
ONSEMI NTB30N06L technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NTB30N06L.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Published
- 2006
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Terminal Finish
- Tin/Lead (Sn/Pb)
- HTS Code
- 8541.29.00.95
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 60V
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 235
- Reach Compliance Code
- not_compliant
Download datasheets and manufacturer documentation for ONSEMI NTB30N06L.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
NTB30N06L Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 101 mJ.A device's maximum input capacitance is 1150pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 15.6 ns.Its maximum pulsed drain current is 90A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 15V.This device uses no drive voltage (5V) to reduce its overall power consumption.
NTB30N06L Features
the avalanche energy rating (Eas) is 101 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 15.6 ns
based on its rated peak drain current 90A.
NTB30N06L Applications
There are a lot of ON Semiconductor
NTB30N06L applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
