ONSEMI MJD45H11TF
Manufacturer No:
MJD45H11TF
Manufacturer:
ONSEMI
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
PNP 150°C TJ 10?A 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
Quantity:
In Stock :6298
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Shipped from：HK Warehouse
Expected Shipping：Wed, Jun 10 - Thu, Jun 11, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
MJD45H11TF Information
ONSEMI MJD45H11TF technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MJD45H11TF.
- Type
- Parameter
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Weight
- 260.37mg
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Type
- Parameter
- Published
- 2010
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -80V
- Max Power Dissipation
- 20W
Download datasheets and manufacturer documentation for ONSEMI MJD45H11TF.
Datasheets:
PCN Design/Specification:
MJD45H11TF Overview
The DC current gain is the ratio of the base current to the collector current ?dc = Ic/Ib and the DC current gain for this device is 40 @ 4A 1V.With a collector emitter saturation voltage of -1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -8A.A transition frequency of 40MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 8A volts at its maximum.
MJD45H11TF Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz
MJD45H11TF Applications
There are a lot of ON Semiconductor
MJD45H11TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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