ONSEMI KSC5030FRTU
Manufacturer No:
KSC5030FRTU
Manufacturer:
ONSEMI
Package:
TO-3P-3 Full Pack
Description:
NPN 10?A ICBO 1 Elements TO-3P-3 Full Pack Tube Through Hole
Quantity:
In Stock :8338
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Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
KSC5030FRTU Information
ONSEMI KSC5030FRTU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI KSC5030FRTU.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3 Full Pack
- Packaging
- Tube
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Max Power Dissipation
- 60W
- Number of Elements
- 1
- Type
- Parameter
- Element Configuration
- Single
- Power Dissipation
- 60W
- Transistor Type
- NPN
- Collector Emitter Voltage (VCEO)
- 800V
- Max Collector Current
- 6A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 10 @ 600mA 5V
- Current - Collector Cutoff (Max)
- 10?A ICBO
- Vce Saturation (Max) @ Ib, Ic
- 2V @ 600mA, 3A
- Collector Emitter Breakdown Voltage
- 800V
- Collector Base Voltage (VCBO)
- 1.1kV
Download datasheets and manufacturer documentation for ONSEMI KSC5030FRTU.
PCN Obsolescence/ EOL:
ReachStatement:
KSC5030FRTU Overview
In this device, the DC current gain is 10 @ 600mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 600mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
KSC5030FRTU Features
the DC current gain for this device is 10 @ 600mA 5V
the vce saturation(Max) is 2V @ 600mA, 3A
the emitter base voltage is kept at 7V
KSC5030FRTU Applications
There are a lot of ON Semiconductor
KSC5030FRTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
