INFINEON IRF7807VPBF
Manufacturer No:
IRF7807VPBF
Manufacturer:
INFINEON
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tube 25m ? @ 7A, 4.5V ±20V 14nC @ 5V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :8053
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Shipped from：HK Warehouse
Expected Shipping：Wed, Jun 10 - Thu, Jun 11, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF7807VPBF Information
INFINEON IRF7807VPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7807VPBF.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2003
- Part Status
- Discontinued
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 8
- Termination
- SMD/SMT
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 30V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Current Rating
- 8.3A
Download datasheets and manufacturer documentation for INFINEON IRF7807VPBF.
Other Related Documents:
PCN Assembly/Origin:
PCN Packaging:
PCN Part Status Change:
ConflictMineralStatement:
IRF7807VPBF Overview
This device has a continuous drain current (ID) of [8.3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 11 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 6.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (4.5V).
IRF7807VPBF Features
a continuous drain current (ID) of 8.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11 ns
IRF7807VPBF Applications
There are a lot of Infineon Technologies
IRF7807VPBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
