INFINEON IRF7490PBF
Manufacturer No:
IRF7490PBF
Manufacturer:
INFINEON
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tube 39m ? @ 3.2A, 10V ±20V 1720pF @ 25V 56nC @ 10V 100V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :7064
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Shipped from：HK Warehouse
Expected Shipping：Wed, Jun 10 - Thu, Jun 11, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IRF7490PBF Information
INFINEON IRF7490PBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7490PBF.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2002
- JESD-609 Code
- e3
- Part Status
- Discontinued
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 8
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-G8
Download datasheets and manufacturer documentation for INFINEON IRF7490PBF.
Other Related Documents:
IRF7490PBF Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 91 mJ.A device's maximal input capacitance is 1720pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 5.4A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 43A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF7490PBF Features
the avalanche energy rating (Eas) is 91 mJ
based on its rated peak drain current 43A.
a 100V drain to source voltage (Vdss)
IRF7490PBF Applications
There are a lot of Infineon Technologies
IRF7490PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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