INFINEON IPD053N06N3G
Manufacturer No:
IPD053N06N3G
Manufacturer:
INFINEON
Package:
Description:
Tape & Reel 800 V
Quantity:
In Stock :6228
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Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IPD053N06N3G Information
INFINEON IPD053N06N3G technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPD053N06N3G.
- Type
- Parameter
- Mount
- Surface Mount, Through Hole
- Surface Mount
- YES
- Number of Terminals
- 2
- Transistor Element Material
- SILICON
- Turn-On Delay Time
- 24 ns
- RoHS Status
- RoHS Compliant
- Package Shape
- RECTANGULAR
- Manufacturer
- Infineon Technologies AG
- Packaging
- Tape & Reel
- JESD-609 Code
- e3
- Type
- Parameter
- ECCN Code
- EAR99
- Terminal Finish
- MATTE TIN
- Max Operating Temperature
- 175 °C
- Min Operating Temperature
- -55 °C
- Subcategory
- FET General Purpose Power
- Max Power Dissipation
- 42 W
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Reach Compliance Code
- compliant
Download datasheets and manufacturer documentation for INFINEON IPD053N06N3G.
IPD053N06N3G Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 68 mJ.This device's continuous drain current (ID) is 90 A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60 V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 90 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 32 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 360 A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 5.3 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20 V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60 V.This transistor requires a 800 V drain to source voltage (Vdss).
IPD053N06N3G Features
the avalanche energy rating (Eas) is 68 mJ
a continuous drain current (ID) of 90 A
a drain-to-source breakdown voltage of 60 V voltage
the turn-off delay time is 32 ns
based on its rated peak drain current 360 A.
single MOSFETs transistor is 5.3 mΩ
a 800 V drain to source voltage (Vdss)
IPD053N06N3G Applications
There are a lot of Infineon
IPD053N06N3G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
