INFINEON IPA60R080P7XKSA1
Manufacturer No:
IPA60R080P7XKSA1
Manufacturer:
INFINEON
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Tube 80m ? @ 11.8A, 10V ±20V 2180pF @ 400V 51nC @ 10V 600V TO-220-3 Full Pack
Quantity:
In Stock :6003
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
IPA60R080P7XKSA1 Information
INFINEON IPA60R080P7XKSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPA60R080P7XKSA1.
- Type
- Parameter
- Factory Lead Time
- 18 Weeks
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- CoolMOS? P7
- Published
- 2014
- JESD-609 Code
- e3
- Type
- Parameter
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- Not Applicable
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSFM-T3
Download datasheets and manufacturer documentation for INFINEON IPA60R080P7XKSA1.
Datasheets:
ConflictMineralStatement:
IPA60R080P7XKSA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 118 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2180pF @ 400V.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 110A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IPA60R080P7XKSA1 Features
the avalanche energy rating (Eas) is 118 mJ
based on its rated peak drain current 110A.
a 600V drain to source voltage (Vdss)
IPA60R080P7XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R080P7XKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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