ONSEMI FQD13N10TF
Manufacturer No:
FQD13N10TF
Manufacturer:
ONSEMI
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 180mOhm @ 5A, 10V ±25V 450pF @ 25V 16nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :7326
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Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQD13N10TF Information
ONSEMI FQD13N10TF technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FQD13N10TF.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- D-Pak
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- QFET®
- Published
- 2016
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- Power Dissipation-Max
- 2.5W Ta 40W Tc
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 180mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 450pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 10A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 16nC @ 10V
- Drain to Source Voltage (Vdss)
- 100V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±25V
Download datasheets and manufacturer documentation for ONSEMI FQD13N10TF.
FQD13N10TF Overview
A device's maximal input capacitance is 450pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FQD13N10TF Features
a 100V drain to source voltage (Vdss)
FQD13N10TF Applications
There are a lot of ON Semiconductor
FQD13N10TF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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