ONSEMI FQA85N06
Manufacturer No:
FQA85N06
Manufacturer:
ONSEMI
Package:
TO-3P-3, SC-65-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 10mOhm @ 50A, 10V ±25V 4120pF @ 25V 112nC @ 10V 60V TO-3P-3, SC-65-3
Quantity:
In Stock :7048
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQA85N06 Information
ONSEMI FQA85N06 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FQA85N06.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3, SC-65-3
- Number of Pins
- 3
- Supplier Device Package
- TO-3P
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- QFET®
- Published
- 2001
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Voltage - Rated DC
- 60V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 100A
- Number of Elements
- 1
- Power Dissipation-Max
- 214W Tc
- Element Configuration
- Single
- Power Dissipation
- 214W
Download datasheets and manufacturer documentation for ONSEMI FQA85N06.
Datasheets:
ReachStatement:
FQA85N06 Description
Using Fairchild's unique, planar stripe, DMOS technology, N-Channel enhancement mode power field effect transistors are made in the FQA85N06 configuration. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. Low voltage applications including automotive, DC/DC converters, and high efficiency switching for power management in portable and battery-operated goods are ideally suited for FQA85N06.
FQA85N06 Features
Fast switching
100% avalanche tested
Low Crss ( typical 165 pF)
Improved dv/dt capability
Low gate charge ( typical 86 nC)
100A, 60V, RDS(on) = 0.010? @VGS = 10 V
175°C maximum junction temperature rating
FQA85N06 Applications
Industrial
Enterprise systems
Personal electronics
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
