ONSEMI FODM8801BV
Manufacturer No:
FODM8801BV
Manufacturer:
ONSEMI
Package:
4-SOIC (0.173, 4.40mm Width)
Description:
OptoHiT™ Series, High-Temperature Phototransistor
Quantity:
In Stock :4011
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Wed, Jun 10 - Thu, Jun 11, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FODM8801BV Information
ONSEMI FODM8801BV technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FODM8801BV.
- Type
- Parameter
- MSL Type
- 1
- VISO (Min) (V)
- 3750
- Package Type
- MFP-4
- CTR (Min) (%)
- 130
- VCE(sat) (Max) (V)
- 0.4
- BVCBO (Min) (V)
- -
- Channels
- 1
- toff (Max) (µs)
- 6
- TOPR (Min) (°C)
- -40
- TOPR (Max) (°C)
- 125
- Type
- Parameter
- Case Outline
- 100AL
- MSL Temp (°C)
- 245
- Container Type
- TUBE
- Container Qty.
- 3000
- CTR (Max) (%)
- 260
- CTR tested @ IF (mA)
- 1
- BVCEO (Min) (V)
- 75
- BVECO (Min) (V)
- 7
- ton (Max) (µs)
- 6
Download datasheets and manufacturer documentation for ONSEMI FODM8801BV.
Datasheet:
Package Drawing:
The OptoHiT™ FODM8801 is a first-of-its-kind phototransistor, utilizing onsemi’s leading-edge, proprietary process technology to achieve high operating temperature characteristics, up to 125°C. The optocoupler consists of an aluminum gallium arsenide (AlGaAs) infrared light emitting diode (LED) optically coupled to a phototransistor, in a compact half pitch, mini-flat, 4-pin package. It delivers high current transfer ratio at very low input current. The input-output isolation voltage, VISO, is rated at 3750 VACRMS.
Feature
- Utilizing proprietary process technology to achieve high operating temperature up to 125°C
- Guaranteed Current Transfer Ratio (CTR) specifications across full temperature range
- Excellent CTR linearity at high temperature
- CTR at very low input current, IF
- High isolation voltage regulated by safety agency, UL1577, 3750 VAC RMS for 1 min. and DIN EN/IEC60747-5-2 (pending approval)
- Compact half pitch, mini-flat, 4-pin package (1.27mm lead pitch, 2.4mm maximum standoff height)
- > 5mm creepage and clearance distance
- Applicable to Infrared Ray reflow, 245°C
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
