ONSEMI FJP5021RVTU
Manufacturer No:
FJP5021RVTU
Manufacturer:
ONSEMI
Package:
TO-220-3
Description:
NPN 150°C TJ 10?A ICBO TO-220-3 Tube Through Hole
Quantity:
In Stock :7962
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Expected Shipping：Wed, Jun 10 - Thu, Jun 11, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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FJP5021RVTU Information
ONSEMI FJP5021RVTU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FJP5021RVTU.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220-3
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Base Part Number
- FJP5021
- Power - Max
- 50W
- Transistor Type
- NPN
- Type
- Parameter
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 15 @ 600mA 5V
- Current - Collector Cutoff (Max)
- 10?A ICBO
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 600mA, 3A
- Voltage - Collector Emitter Breakdown (Max)
- 500V
- Current - Collector (Ic) (Max)
- 5A
- Frequency - Transition
- 18MHz
Download datasheets and manufacturer documentation for ONSEMI FJP5021RVTU.
FJP5021RVTU Overview
The DC current gain is the ratio of the base current to the collector current ?dc = Ic/Ib and the DC current gain for this device is 15 @ 600mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 600mA, 3A.The product comes in the supplier device package of TO-220-3.A 500V maximal voltage - Collector Emitter Breakdown is present in the device.
FJP5021RVTU Features
the DC current gain for this device is 15 @ 600mA 5V
the vce saturation(Max) is 1V @ 600mA, 3A
the supplier device package of TO-220-3
FJP5021RVTU Applications
There are a lot of ON Semiconductor
FJP5021RVTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
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