DIODES DMTH8008SFG-13

Manufacturer No:

DMTH8008SFG-13

Manufacturer:

DIODES

Package:

8-PowerVDFN

Description:

MOSFET (Metal Oxide) N-Channel 7mOhm @ 14A, 10V ±20V 1945 pF @ 40 V 31.7 nC @ 10 V 80 V 8-PowerVDFN

Quantity:

In Stock :9214

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Shipped from：HK Warehouse

Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

DMTH8008SFG-13 Information

DIODES DMTH8008SFG-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMTH8008SFG-13.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
8-PowerVDFN

Supplier Device Package
PowerDI3333-8

Mfr
Diodes Incorporated

Package
Tape & Reel (TR)

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
6V, 10V

Power Dissipation (Max)
1.2W (Ta), 50W (Tc)

Operating Temperature
-55°C ~ 175°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
7mOhm @ 14A, 10V

Vgs(th) (Max) @ Id
4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
1945 pF @ 40 V

Current - Continuous Drain (Id) @ 25°C
17A (Ta), 68A (Tc)

Gate Charge (Qg) (Max) @ Vgs
31.7 nC @ 10 V

Drain to Source Voltage (Vdss)
80 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for DIODES DMTH8008SFG-13.

DMTH8008SFG-13 Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1945 pF @ 40 V.Operating this transistor requires a 80 V drain to source voltage (Vdss).