DIODES DMTH48M3SFVWQ-7

Manufacturer No:

DMTH48M3SFVWQ-7

Manufacturer:

DIODES

Package:

8-PowerVDFN

Description:

MOSFET (Metal Oxide) N-Channel 8.9mOhm @ 20A, 10V ±20V 897 pF @ 20 V 12.1 nC @ 10 V 40 V 8-PowerVDFN

Quantity:

In Stock :7901

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Shipped from：HK Warehouse

Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

DMTH48M3SFVWQ-7 Information

DIODES DMTH48M3SFVWQ-7 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMTH48M3SFVWQ-7.

Type
Parameter

Mounting Type
Surface Mount, Wettable Flank

Package / Case
8-PowerVDFN

Supplier Device Package
PowerDI3333-8 (SWP) Type UX

Mfr
Diodes Incorporated

Package
Tape & Reel (TR)

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
2.82W (Ta), 36.6W (Tc)

Series
Automotive, AEC-Q101

Operating Temperature
-55°C ~ 175°C (TJ)

Type
Parameter

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
8.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
897 pF @ 20 V

Current - Continuous Drain (Id) @ 25°C
14.6A (Ta), 52.4A (Tc)

Gate Charge (Qg) (Max) @ Vgs
12.1 nC @ 10 V

Drain to Source Voltage (Vdss)
40 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for DIODES DMTH48M3SFVWQ-7.

DMTH48M3SFVWQ-7 Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 897 pF @ 20 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40 V.