DIODES DMP32D9UFO-7B

Manufacturer No:

DMP32D9UFO-7B

Manufacturer:

DIODES

Package:

3-XFDFN

Description:

MOSFET (Metal Oxide) P-Channel 5Ohm @ 100mA, 4.5V ±12V 21.8 pF @ 15 V 0.35 nC @ 4.5 V 30 V 3-XFDFN

Quantity:

In Stock :3449

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Wed, Jun 10 - Thu, Jun 11, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step2：Desiccant Protection

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SHIPPING COST

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

DMP32D9UFO-7B Information

DIODES DMP32D9UFO-7B technical specifications, attributes, parameters and parts with similar specifications to DIODES DMP32D9UFO-7B.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
3-XFDFN

Supplier Device Package
X2-DFN0604-3

Mfr
Diodes Incorporated

Package
Tape & Reel (TR)

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V

Power Dissipation (Max)
320mW (Ta)

Operating Temperature
-55°C ~ 150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
P-Channel

Rds On (Max) @ Id, Vgs
5Ohm @ 100mA, 4.5V

Vgs(th) (Max) @ Id
1V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
21.8 pF @ 15 V

Current - Continuous Drain (Id) @ 25°C
200mA (Ta)

Gate Charge (Qg) (Max) @ Vgs
0.35 nC @ 4.5 V

Drain to Source Voltage (Vdss)
30 V

Vgs (Max)
±12V

Download datasheets and manufacturer documentation for DIODES DMP32D9UFO-7B.

DMP32D9UFO-7B Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 21.8 pF @ 15 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30 V.