DIODES DMN2005UFG-13
Manufacturer No:
DMN2005UFG-13
Manufacturer:
DIODES
Package:
8-PowerVDFN
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4.6m ? @ 13.5A, 4.5V ±12V 6495pF @ 10V 164nC @ 10V 8-PowerVDFN
Quantity:
In Stock :6189
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Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
DMN2005UFG-13 Information
DIODES DMN2005UFG-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMN2005UFG-13.
- Type
- Parameter
- Factory Lead Time
- 23 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Number of Pins
- 8
- Weight
- 72.007789mg
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2016
- JESD-609 Code
- e3
- Type
- Parameter
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Number of Channels
- 1
- Power Dissipation-Max
- 1.05W Ta
- Element Configuration
- Single
Download datasheets and manufacturer documentation for DIODES DMN2005UFG-13.
Environmental Information:
DMN2005UFG-13 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6495pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 18.1A amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.It is [114 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 12.4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).
DMN2005UFG-13 Features
a continuous drain current (ID) of 18.1A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 114 ns
DMN2005UFG-13 Applications
There are a lot of Diodes Incorporated
DMN2005UFG-13 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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