DIODES DMJ70H1D0SV3
Manufacturer No:
DMJ70H1D0SV3
Manufacturer:
DIODES
Package:
TO-251-3 Stub Leads, IPak
Description:
MOSFET (Metal Oxide) N-Channel Tube 1 ? @ 1.5A, 10V ±30V 420pF @ 50V 12.8nC @ 10V 700V TO-251-3 Stub Leads, IPak
Quantity:
In Stock :4415
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Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
DMJ70H1D0SV3 Information
DIODES DMJ70H1D0SV3 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMJ70H1D0SV3.
- Type
- Parameter
- Factory Lead Time
- 9 Weeks
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Stub Leads, IPak
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- Not Applicable
- Type
- Parameter
- Number of Terminations
- 3
- Terminal Finish
- Matte Tin (Sn)
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSIP-T3
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
Download datasheets and manufacturer documentation for DIODES DMJ70H1D0SV3.
DMJ70H1D0SV3 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 7.5 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 420pF @ 50V maximal input capacitance.A device can conduct a maximum continuous current of [6A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 8A.The DS breakdown voltage should be maintained above 700V to maintain normal operation.To operate this transistor, you will need a 700V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
DMJ70H1D0SV3 Features
the avalanche energy rating (Eas) is 7.5 mJ
based on its rated peak drain current 8A.
a 700V drain to source voltage (Vdss)
DMJ70H1D0SV3 Applications
There are a lot of Diodes Incorporated
DMJ70H1D0SV3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
