INFINEON BSP299L6327HUSA1
INFINEON BSP299L6327HUSA1

INFINEON BSP299L6327HUSA1

Manufacturer No:

BSP299L6327HUSA1

Manufacturer:

INFINEON

Package:

TO-261-4, TO-261AA

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4Ohm @ 400mA, 10V ±20V 400pF @ 25V 500V TO-261-4, TO-261AA

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In Stock :4036

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Shipped from:HK Warehouse
Expected Shipping:Mon, May 25 - Tue, May 26, 2026
Date Code:Within 2 Years

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

Step4:Individual Package

Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

Step6:Packaging Box

Step6:Packaging Box

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

BSP299L6327HUSA1 Information

INFINEON BSP299L6327HUSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON BSP299L6327HUSA1.

  • Type
  • Parameter
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-261-4, TO-261AA
  • Number of Pins
  • 4
  • Supplier Device Package
  • PG-SOT223-4
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Series
  • SIPMOS®
  • Published
  • 2009
  • Part Status
  • Obsolete
  • Type
  • Parameter
  • Moisture Sensitivity Level (MSL)
  • 3 (168 Hours)
  • Max Operating Temperature
  • 150°C
  • Min Operating Temperature
  • -55°C
  • Technology
  • MOSFET (Metal Oxide)
  • Number of Elements
  • 1
  • Power Dissipation-Max
  • 1.8W Ta
  • Power Dissipation
  • 1.8W
  • Turn On Delay Time
  • 8 ns
  • FET Type
  • N-Channel
  • Rds On (Max) @ Id, Vgs
  • 4Ohm @ 400mA, 10V

Download datasheets and manufacturer documentation for INFINEON BSP299L6327HUSA1.

BSP299L6327HUSA1 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 400pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 55 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

BSP299L6327HUSA1 Features


a continuous drain current (ID) of 400mA
the turn-off delay time is 55 ns
a 500V drain to source voltage (Vdss)


BSP299L6327HUSA1 Applications


There are a lot of Infineon Technologies
BSP299L6327HUSA1 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.