Microchip APTML20UM18R010T1AG
Manufacturer No:
APTML20UM18R010T1AG
Manufacturer:
Microchip
Package:
SP1
Description:
MOSFET (Metal Oxide) N-Channel Bulk 19m ? @ 50A, 10V ±30V 9880pF @ 25V 200V SP1
Quantity:
In Stock :5581
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Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APTML20UM18R010T1AG Information
Microchip APTML20UM18R010T1AG technical specifications, attributes, parameters and parts with similar specifications to Microchip APTML20UM18R010T1AG.
- Type
- Parameter
- Mount
- Chassis Mount, Screw
- Mounting Type
- Chassis Mount
- Package / Case
- SP1
- Number of Pins
- 1
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Bulk
- Published
- 2016
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 12
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
- Terminal Form
- UNSPECIFIED
- Pin Count
- 12
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE AND THERMISTOR
- Power Dissipation-Max
- 480W Tc
Download datasheets and manufacturer documentation for Microchip APTML20UM18R010T1AG.
APTML20UM18R010T1AG Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 3000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9880pF @ 25V.This device conducts a continuous drain current (ID) of 109A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 44A.Pulsed drain current is maximum rated peak drain current 400A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APTML20UM18R010T1AG Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 109A
based on its rated peak drain current 400A.
a 200V drain to source voltage (Vdss)
APTML20UM18R010T1AG Applications
There are a lot of Microsemi Corporation
APTML20UM18R010T1AG applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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