ONSEMI 2N5551CBU
Manufacturer No:
2N5551CBU
Manufacturer:
ONSEMI
Package:
TO-226-3, TO-92-3 (TO-226AA)
Description:
NPN -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
Quantity:
In Stock :1781
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Shipped from：HK Warehouse
Expected Shipping：Wed, Jun 10 - Thu, Jun 11, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
2N5551CBU Information
ONSEMI 2N5551CBU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2N5551CBU.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Bulk
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Base Part Number
- 2N5551
- Power - Max
- 625mW
- Transistor Type
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 10mA 5V
- Type
- Parameter
- Current - Collector Cutoff (Max)
- 50nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 200mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)
- 160V
- Current - Collector (Ic) (Max)
- 600mA
- Frequency - Transition
- 100MHz
Download datasheets and manufacturer documentation for ONSEMI 2N5551CBU.
Datasheets:
2N5551CBU Overview
DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 5mA, 50mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2N5551CBU Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
2N5551CBU Applications
There are a lot of ON Semiconductor
2N5551CBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
